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 SS8021
Stereo Headphone Power Amplifier
FEATURES
High performance Class AB amplifier High signal-to-noise ratio Low distortion Low power consumption Large output voltage swing Excellent power supply ripple rejection Supply voltage range of 3.0V to 6.5V Surface-mount package - SO-8
DESCRIPTION
The SS8021 is an output-rail-to-rail stereo audio power amplifier housed in an 8-pin SOP package capable of delivering 125mW of continuous power into 16 loads and 75mW into 32 loads with THD <0.1% per channel. The gain of the amplifiers can be easily set with two external resistors - R I (input resistor) and RF (feedback resistor). The SS8021 is a dual channel, low voltage, low power, high performance amplifier. The quiescent current is typically 3mA at 5V. With excellent AC performance (small THD), it can be designed into a wide range of headphone driving applications.
APPLICATIONS
CD-ROM DVD-ROM CD-R/W MP3 Portable Stereo
ORDERING INFORMATION
SS8021(G)XX Packing: TR Tape and reel : TB Tubes
This device is normally supplied with Pb-free lead finish (second-level interconnect) as SS8021G, but can be supplied with a traditional lead finish (SS8021) upon request.
PIN CONFIGURATION
SS8021
OUTA INA(neg) INA(pos) VSS 1 2 3 4 8 7 6 5 VDD OUTB INB(neg) INB(pos)
SYMBOL
OUTA INA(neg) INA(pos) VSS INB(pos) INB(neg) OUTB VDD
PIN
1 2 3 4 5 6 7 8
DESCRIPTION
output A inverting input A non-inverting input A negative supply non-inverting input B inverting input B output B positive supply
8/21/2004 Rev.2.01
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SS8021
BLOCK DIAGRAM
SS8021
OUTA INA(neg) INA(pos) 1 2 3 8 VDD
_ _
7
_
OUTB INB(neg) INB(pos)
+ + +
6 5
VSS
4
ABSOLUTE MAXIMUM RATINGS (Note1)
SYMBOL
VDD Tstg Tamb ESD
PARAMETER
Supply voltage Storage temperature Operating ambient temperature ESD voltage HBM
CONDITION
MIN
0 -65 -40 -
MAX
7.0 +150 +85 2
UNIT
V C C KV
Notes: 1. Absolute Maximum Ratings are limits beyond which damage to the device may occur.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
Thermal resistance from junction to ambient in free air SO8
VALUE
240
UNIT
C/W
TEST AND APPLICATION INFORMATION
VDD 3.9k 220F + RL 100k VOUTA
2.2F VINA
3.9k
1 2 3 _ +
8
+
SS8021
VINB 2.2F 3.9k 6 _ _ 7 4 + + 3.9k 220F + 5
C6 100F
1F
100k
VOUTB RL
Fig.1 Measurement circuit for inverting application
8/21/2004 Rev.2.01
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SS8021
ELECTRICAL CHARACTERISTICS
VDD = 5V; VSS= 0V; TA = 25C; f I= 1kHz; RL = 32 connected to VDD/2; unless otherwise specified. SYMBOL
Supplies VDD Supply voltage Single Dual VSS IDD Negative supply voltage Supply current no load no load 3.0 3.0 1.5 -1.5 -50 RL = 5k THD+N <0.1% closed-loop Sourcing current = 100mA Sinking current = 100mA fi = 1kHz; Vripple(rms) = 100mVrms RL=32 ,Cb=1F, PO=70mW note 2 open-loop; RL = 5k note 1; RL = 16 ; f=1kHz note 1; RL = 32 ; f=1kHz 0 60 5.0 5.0 2.5 -2.5 3.0 15 90 70 0.1 0.4 0.5 70 65 < 0.1 5 125 75 6.5 6.5 3.25 -3.25 5.0 25 50 3.5 1 1 V V V V mA mW mV V dB mA V V dB dB % MHz mW mW
PARAMETER
CONDITION
MIN
TYP
MAX
UNIT
Ptot Total power dissipation DC Characteristics VI(OS) VCM GV IO RO VDD-VOH VOL-VSS PSRR Input offset voltage Common mode voltage Open-loop voltage gain Maximum output current Output resistance Output Voltage Swing High Output Voltage Swing Low Power supply rejection ratio
CS Channel separation AC Characteristics
THD fG PO Total harmonic distortion Unity gain frequency Maximum output power
Notes: 1. Values are proportional to VDD; THD+N < 0.1% 2. VDD = 5.0V; VO(P-P) = 4.0V (at 0 dB)
8/21/2004 Rev.2.01
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SS8021
Electrical Characteristics
CIN=2.2F, COUT=330F, Cb=1F, Av=1, Ri=18k , Rf=18k ; Av=-2, Ri=18k , Rf=36k ; Av=-4, Ri=9k ,Rf=36k ,TA=25C
THD+N vs Output Power
10 10 5
THD+N vs Frequency
5
2
VDD=5V RL=32 Av=-1
2
VDD=5V RL=32 Po=50mW Av=-4V/V Av=-2V/V
1
1
0.5 % 0.2
0.5
20kHz
0.1
% 0.2
0.1
0.05
1kHz 20Hz
2m 5m 10m W 20m 50m 100m 200m
0.05
0.02
0.02
Av=-1V/V
50 100 200 500 Hz 1k 2k 5k 10k 20k
0.01 1m
0.01 20
THD+N vs Frequency
10 10 5 5
THD+N vs Output Power
VDD=5V RL=16 Av=-1
2
VDD=5V RL=32 Av=-1
2
1
1
0.5 % 0.2 %
0.5
20kHz 1kHz
0.2
0.1
Po=70mW
0.1
0.05
0.05
20Hz
0.02
Po=60mW
50 100 200 500 Hz 1k 2k 5k 10k 20k
0.02
0.01 20
0.01 2m
5m
10m
20m W
50m
100m
200m
THD+N vs Frequency
10 10 5
THD+N vs Output Power
5
2
VDD=5V RL=16 Po=50mW Av=-4V/V Av=-2V/V
%
2
VDD=3.3V RL=32 Av=-1
1
1
0.5 % 0.2
0.5
20kHz
0.2
0.1
0.1
1kHz
0.05
0.05
0.02
Av=-1V/V
50 100 200 500 Hz 1k 2k 5k 10k 20k
0.02
20Hz
2m 5m 10m W 20m 50m 100m
0.01 20
0.01 1m
8/21/2004 Rev.2.01
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SS8021
ELECTRICAL CHARACTERISTICS (continued)
THD+N vs Frequency
10 10 5 5
THD+N vs Output Power
VDD=3.3V RL=16 Av=-1 20kHz 20Hz
2
VDD=3.3V RL=32 Po=25mW Av=-4V/V
%
2
1
1
0.5 % 0.2
0.5
Av=-2V/V
0.2
0.1
0.1
0.05
0.05
1kHz
0.02
Av=-1V/V
50 100 200 500 Hz 1k 2k 5k 10k 20k
0.02
0.01 20
0.01 2m
3m
4m
5m 6m 7m
10m W
20m
30m
40m 50m
70m 100m
THD+N vs Frequency
10 100u 90u 5
Output Noise
80u 70u 60u 50u
2
VDD=3.3V RL=16 Po=25mW Av=-4V/V Av=-2V/V
V
1
VDD=5V RL=32 Av=-1 Cb=1F
BW=20kHz , No filters
40u
0.5 % 0.2
30u
0.1 20u 0.05
A- Weighting
Av=-1V/V
0.02
0.01 20
50
100
200
500 Hz
1k
2k
5k
10k
20k
10u 20
50
100
200
500 Hz
1k
2k
5k
10k
20k
Channel Separation
-20 -25 -30 -35 -40 -45 -50 -55 d B -60 -65 -70 -75 -80 -85 -90 -95 -100 20 50 100 200 500 Hz 1k 2k 5k 10k 20k -110 -120 20 +0 -10 -20 -30 -40
Power Supply Rejection Ratio
VDD=5V RL=32 Av=-1 Vripple=100mVrms Cb=1F Vpin 3,5=2.5V FORCED
VDD=5V RL=32 Av=-1 Po=70mW Cb=1F
Channel A to B
d B
-50 -60 -70 -80 -90 -100
Channel B to A
50
100
200
500 Hz
1k
2k
5k
10k
20k
8/21/2004 Rev.2.01
www.SiliconStandard.com
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SS8021
ELECTRICAL CHARACTERISTICS
(continued)
Open Loop Frequency Response
8/21/2004 Rev.2.01
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SS8021
ELECTRICAL CHARACTERISTICS (continued)
Supply Current vs.Supply Voltage
2.6 2.4 Supply Current (mA) 2.2 2 1.8 1.6 1.4 1.2 1 2.5 3.5 4.5 5.5 Supply Voltage(V) 6.5 Supply Current (mA)
Supply Current vs. Temperature
2.4 2.2 VDD=5V 2 1.8 1.6 1.4 1.2 1 -50 -25 0 25 50 75 Temperature (C) 100 125 VDD=3V
Offset Voltage vs. Supply Voltage
5 4.8 Offset Voltage (mV) 4.4 4.2 4 3.8 3.6 3.4 3.2 3 2.5 3.5 4.5 5.5 Supply Voltage (V) 6.5 2 Offset Voltage (mV) 4.6 4.5 4 3.5 5
Offset Voltage vs.Temperature
VDD=3V
VDD=5V 3 2.5
-50
-25
0 25 50 75 Temperature (C)
100
125
Sinking Current vs. Vo-Vss
350 300 Sinking Current(mA) 250 200 150 100 50 0 0 0.5 1 1.5 2 VO-Vss(V) 2.5 3 VDD=3V VDD=5V Sourcing Current(mA) 350 300
Sourcing Current vs. VDD-Vo
VDD=5V 250 200 VDD=3V 150 100 50 0 0 0.5 1 1.5 2 VDD - VO(V) 2.5 3
8/21/2004 Rev.2.01
www.SiliconStandard.com
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SS8021
PHYSICAL DIMENSIONS
C
E
H
L
D
7 (4X) 7
Taping Specification
A2
A
y
A1
e
B
Feed Direction Typical SOP Package Orientation
1. Package body sizes exclude mold flash and gate burrs 2. Dimension L is measured in gage plane 3. Tolerance 0.10mm unless otherwise specified 4. Controlling dimension is millimeter converted inch dimensions are not necessarily exact.
SYMBOL
A A1 A2 B C D E e H L y
MIN.
1.35 0.10 ----0.33 0.19 4.80 3.80 ----5.80 0.40 ----0
DIMENSION IN MM NOM.
1.60 ----1.45 ----------------1.27 -----------------
MAX.
1.75 0.25 ----0.51 0.25 5.00 4.00 ----6.20 1.27 0.10 8
MIN.
0.053 0.004 ----0.013 0.007 0.189 0.150 ----0.228 0.016 ----0
DIMENSION IN INCH NOM.
0.063 ----0.057 ----------------0.050 -----------------
MAX.
0.069 0.010 ----0.020 0.010 0.197 0.157 ----0.244 0.050 0.004 8
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties.
8/21/2004 Rev.2.01
www.SiliconStandard.com
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